Specification for Diode: TVS array
| Mounting | SMD |
| Case | SOT666 |
| Operating temperature | -55...150°C |
| Number of channels | 4 |
| Semiconductor structure | quadruple, unidirectional |
| Max. off-state voltage | 3V |
| Max. forward impulse current | 5A |
| Version | ESD |
| Application | universal |
| Type of diode | Transil array |
| Breakdown voltage | 6V |
| Leakage current | 10nA |
| Capacitance | 2.5pF |