Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A

    Multiples: 10.0
    Minimum quantity: 10.0
    Product code: F475R12KS4BOSA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: F475R12KS4BOSA1
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Topology
    • Collector current
    • Max operating temperature

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    Specification for Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A

    Case AG-ECONO2-6
    Electrical mounting Press-in PCB
    Mechanical mounting screw
    Semiconductor structure transistor/transistor
    Max. off-state voltage 1.2kV
    Technology EconoPACK™ 2
    Power dissipation 500W
    Gate-emitter voltage ±20V
    Pulsed collector current 150A
    Topology IGBT half-bridge x2, NTC thermistor
    Collector current 75A
    Max operating temperature 125°C