Specification for Diode: TVS; DFN1006-2
| Mounting | SMD |
| Case | DFN1006-2 |
| Number of channels | 1 |
| Semiconductor structure | bidirectional |
| Max. off-state voltage | 7V |
| Max. forward impulse current | 1A |
| Type of diode | transil |
| Breakdown voltage | 7.5V |
| Leakage current | 1µA |
| Capacitance | 15pF |