Specification for Diode: TVS; DFN1006-2
| Mounting | SMD |
| Case | DFN1006-2 |
| Number of channels | 1 |
| Semiconductor structure | bidirectional |
| Max. off-state voltage | 3.3V |
| Max. forward impulse current | 10A |
| Type of diode | transil |
| Breakdown voltage | 3.5V |
| Leakage current | 500nA |
| Capacitance | 20pF |