Specification for Diode: TVS; 0.6kW; 13.2A; bidirectional; SMBJ; 31.1kV/mm
| Mounting | SMD |
| Case | DO214AA, SMB |
| Tolerance | ±5% |
| Kind of package | tape |
| Semiconductor structure | bidirectional |
| Max. off-state voltage | 28V |
| Features of semiconductor devices | glass passivated |
| Technology | TransZorb® |
| Max. forward impulse current | 13.2A |
| Type of diode | transil |
| Breakdown voltage | 31.1V, 31.1...34.4V |
| Leakage current | 1µA |