Specification for Diode: TVS; 1.5kW; 116.3A; bidirectional; SMCJ; 8.33kV/mm
| Mounting | SMD |
| Case | SMC, DO214AB |
| Tolerance | ±5% |
| Kind of package | tape |
| Semiconductor structure | bidirectional |
| Max. off-state voltage | 7.5V |
| Features of semiconductor devices | glass passivated |
| Technology | TransZorb® |
| Max. forward impulse current | 116.3A |
| Type of diode | transil |
| Breakdown voltage | 8.33V, 8.33...9.21V |
| Leakage current | 200µA |