Specification for Diode: TVS; 0.09kW; 4A; bidirectional; 7kV/mm
| Mounting | SMD |
| Case | DFN1006-2 |
| Operating temperature | -55...150°C |
| Number of channels | 1 |
| Semiconductor structure | bidirectional |
| Max. off-state voltage | 3.3V |
| Max. forward impulse current | 4A |
| Type of diode | transil |
| Breakdown voltage | 7V |