IGBT Single Transistor, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins
Kordarv:
800.0
Minimum quantity:
800.0
Tootekood:
AFGB40T65SQDN
Tootja: ONSEMI
Tootja tootekood: AFGB40T65SQDN
Product downloads
Spetsifikatsioon tootele IGBT Single Transistor, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins
| Mounting | SMD |
| Case | D2PAK |
| Kind of package | reel, tape |
| Type of transistor | IGBT |
| Number of pins | 3 |
| Application | automotive industry |
| Power dissipation | 119W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 160A |
| Collector current | 40A |
| Gate charge | 76nC |
| Collector-emitter voltage | 650V |