Spetsifikatsioon tootele Module; SiC diode/transistor; 800V; 21A; Ugs: ±30V; Idm: 112A; 277W
| Case | SP4 |
| Electrical mounting | FASTON connectors, screw |
| Mechanical mounting | screw |
| Technology | CoolMOS™, SiC |
| Drain-source voltage | 800V |
| Drain current | 21A |
| Pulsed drain current | 112A |
| Power dissipation | 277W |
| On-state resistance | 150mΩ |
| Topology | MOSFET half-bridge, NTC thermistor |