Module; SiC diode/transistor; 1.2kV; 23A; Ugs: ±30V; Idm: 195A; 657W

    Kordarv: 12.0
    Minimum quantity: 12.0
    Tootekood: APTM120DA30CT1G
    Tootja: MICROCHIP TECHNOLOGY
    Tootja tootekood: APTM120DA30CT1G
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Topology
    • Topology

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    Spetsifikatsioon tootele Module; SiC diode/transistor; 1.2kV; 23A; Ugs: ±30V; Idm: 195A; 657W

    Case SP1
    Electrical mounting Press-in PCB
    Mechanical mounting screw
    Technology POWER MOS 8®, SiC
    Drain-source voltage 1.2kV
    Drain current 23A
    Pulsed drain current 195A
    Power dissipation 657W
    On-state resistance 360mΩ
    Topology boost chopper, NTC thermistor