Module; SiC diode/transistor; 1.2kV; 86A; Ugs: ±30V; Idm: 464A
Kordarv:
3.0
Minimum quantity:
3.0
Tootekood:
APTM120U10SCAVG
Tootja: MICROCHIP TECHNOLOGY
Tootja tootekood: APTM120U10SCAVG
Spetsifikatsioon tootele Module; SiC diode/transistor; 1.2kV; 86A; Ugs: ±30V; Idm: 464A
| Case | SP6 |
| Electrical mounting | screw |
| Mechanical mounting | screw |
| Technology | SiC, POWER MOS 7® |
| Drain-source voltage | 1.2kV |
| Drain current | 86A |
| Pulsed drain current | 464A |
| Power dissipation | 3.29kW |
| On-state resistance | 120mΩ |