Spetsifikatsioon tootele Module; SiC diode/transistor; 1.2kV; 38A; Idm: 100A; 263W; SiC
| Case | SP3F |
| Electrical mounting | Press-in PCB |
| Mechanical mounting | screw |
| Technology | SiC |
| Drain-source voltage | 1.2kV |
| Drain current | 38A |
| Pulsed drain current | 100A |
| Power dissipation | 263W |
| On-state resistance | 52mΩ |
| Topology | three-level inverter; single-phase, NTC thermistor |