Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: BXW3M1K7H
    Tootja: BRIDGELUX
    Tootja tootekood: BXW3M1K7H
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.7kV
    Drain current 3A
    Pulsed drain current 12A
    Power dissipation 69W
    Gate charge 15nC