IGBT Module, Dual, 275 A, 3.2 V, 1.4 kW, 125 °C, Module

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: FF200R12KS4HOSA1
    Tootja: INFINEON TECHNOLOGIES
    Tootja tootekood: FF200R12KS4HOSA1
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current
    • Max operating temperature

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    Spetsifikatsioon tootele IGBT Module, Dual, 275 A, 3.2 V, 1.4 kW, 125 °C, Module

    Case AG-62MM-1
    Electrical mounting screw
    Mechanical mounting screw
    Semiconductor structure transistor/transistor
    Max. off-state voltage 1.2kV
    Power dissipation 1.4kW
    Gate-emitter voltage ±20V
    Pulsed collector current 400A
    Topology IGBT half-bridge
    Collector current 200A
    Max operating temperature 125°C