Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
G3R30MT12J
Tootja: GENESIC SEMICONDUCTOR
Tootja tootekood: G3R30MT12J
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
| Mounting | SMD |
| Case | TO263-7 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Features of semiconductor devices | Kelvin terminal |
| Technology | SiC |
| Drain-source voltage | 1.2kV |
| Drain current | 68A |
| Pulsed drain current | 200A |
| On-state resistance | 30mΩ |
| Gate charge | 155nC |