Spetsifikatsioon tootele Diode: Schottky rectifying; SiC; THT; 1.2kV; 2x7.5A; 200W; Ir: 8uA
| Mounting | THT |
| Case | PG-TO247-3 |
| Kind of package | tube |
| Semiconductor structure | common cathode, double |
| Max. off-state voltage | 1.2kV |
| Technology | SiC, CoolSiC™ 5G |
| Max. forward impulse current | 160A |
| Max. forward voltage | 1.4V |
| Power dissipation | 200W |
| Type of diode | Schottky rectifying |
| Leakage current | 8µA |