Transistor: IGBT; BiMOSFET™; 1.6kV; 4A; 70W; ISOPLUS i4-pac™

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXBF9N160G
    Tootja: IXYS
    Tootja tootekood: IXBF9N160G
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage

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    Spetsifikatsioon tootele Transistor: IGBT; BiMOSFET™; 1.6kV; 4A; 70W; ISOPLUS i4-pac™

    Mounting THT
    Case ISOPLUS i4-pac™ x024c
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 140ns
    Power dissipation 70W
    Gate-emitter voltage ±20V
    Pulsed collector current 12A
    Collector current 4A
    Gate charge 34nC
    Collector-emitter voltage 1.6kV