Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268

    Kordarv: 300.0
    Minimum quantity: 300.0
    Tootekood: IXBT12N300HV
    Tootja: IXYS
    Tootja tootekood: IXBT12N300HV
    • Mounting
    • Case
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Spetsifikatsioon tootele Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268

    Mounting SMD
    Case TO268
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 64ns
    Power dissipation 160W
    Gate-emitter voltage ±20V
    Pulsed collector current 98A
    Collector current 30A
    Gate charge 62nC
    Collector-emitter voltage 3kV
    Turn-off time 180ns