Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.01 ohm
Kordarv:
1.0
Minimum quantity:
1.0
Sertifikaadid:
Product downloads
Spetsifikatsioon tootele Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.01 ohm
| Max operating temperature | 150°C |