Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 381 A, 1.2 kV, 0.005 ohm
Kordarv:
1.0
Minimum quantity:
1.0
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Spetsifikatsioon tootele Silicon Carbide MOSFET, Silicon Carbide, Half Bridge, Dual N Channel, 381 A, 1.2 kV, 0.005 ohm
| Max operating temperature | 150°C |