Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MMIX1T550N055T2
    Tootja: IXYS
    Tootja tootekood: MMIX1T550N055T2
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    45,60 € 45,60 € (KM-TA) 45.6 EUR

    45,60 €

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    Spetsifikatsioon tootele Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W

    Mounting SMD
    Case SMPD
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology GigaMOS™, TrenchT2™
    Drain-source voltage 55V
    Drain current 550A
    Pulsed drain current 2kA
    Power dissipation 830W
    On-state resistance 1.3mΩ
    Reverse recovery time 100ns
    Gate charge 595nC