Spetsifikatsioon tootele Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
| Mounting | SMD |
| Case | SMPD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | GigaMOS™, TrenchT2™ |
| Drain-source voltage | 40V |
| Drain current | 600A |
| Pulsed drain current | 2kA |
| Power dissipation | 830W |
| On-state resistance | 1.3mΩ |
| Reverse recovery time | 100ns |
| Gate charge | 590nC |