Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 122A; 256W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MSC040SMB120B4N
    Tootja: MICROCHIP TECHNOLOGY
    Tootja tootekood: MSC040SMB120B4N
    • Mounting
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 122A; 256W

    Mounting THT
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 38A
    Power dissipation 256W
    On-state resistance 53mΩ
    Gate charge 69nC