Spetsifikatsioon tootele Module; SiC diode/transistor,triple independent; 1.2kV; 200A
| Case | SP6P |
| Electrical mounting | Press-in PCB |
| Mechanical mounting | screw |
| Technology | SiC |
| Drain-source voltage | 1.2kV |
| Drain current | 200A |
| Pulsed drain current | 500A |
| Power dissipation | 1.042kW |
| On-state resistance | 10.4mΩ |
| Topology | NTC thermistor |