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    2. Kaitsedioodid
    3. Diode: TVS; DFN1006-2
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    Diode: TVS; DFN1006-2

    Kordarv: 10000.0
    Minimum quantity: 10000.0
    Tootekood: PE3212M1Q_R1_00001
    Tootja: PanJit Semiconductor
    Tootja tootekood: PE3212M1Q_R1_00001
    Sertifikaadid:
    • Mounting
    • Case
    • Number of channels
    • Semiconductor structure
    • Max. off-state voltage
    • Max. forward impulse current
    • Type of diode
    • Leakage current
    • Capacitance

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    Spetsifikatsioon tootele Diode: TVS; DFN1006-2

    Mounting SMD
    Case DFN1006-2
    Number of channels 1
    Semiconductor structure unidirectional
    Max. off-state voltage 12V
    Max. forward impulse current 2.5A
    Type of diode transil
    Leakage current 1µA
    Capacitance 20pF