Transistor: N-MOSFET

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SIHB100N60E-GE3
    Tootja: VISHAY
    Tootja tootekood: SIHB100N60E-GE3
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    7,35 € 7,35 € (KM-TA) 7.3500000000000005 EUR

    7,35 €

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    Spetsifikatsioon tootele Transistor: N-MOSFET

    Mounting SMD
    Case D2PAK, TO263
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 600V
    Drain current 19A
    Power dissipation 208W
    On-state resistance 100mΩ
    Gate charge 50nC