Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; DPAK

    Kordarv: 3000.0
    Minimum quantity: 3000.0
    Tootekood: SIHD2N80AE-GE3
    Tootja: VISHAY
    Tootja tootekood: SIHD2N80AE-GE3
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Version
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    1,14 € 1,14 € (KM-TA) 1.1400000000000001 EUR

    1,14 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Product downloads

    Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; DPAK

    Mounting SMD
    Case DPAK, TO252
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Version ESD
    Drain-source voltage 800V
    Drain current 1.8A
    Pulsed drain current 3.6A
    Power dissipation 62.5W
    On-state resistance 2.5Ω
    Gate charge 10.5nC