Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SISS05DN-T1-GE3
Tootja: VISHAY
Tootja tootekood: SISS05DN-T1-GE3
Product downloads
Spetsifikatsioon tootele Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W
| Mounting | SMD |
| Case | PowerPAK® 1212-8 |
| Kind of package | reel, tape |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhanced |
| Technology | TrenchFET® |
| Drain-source voltage | -30V |
| Drain current | -86.6A |
| Pulsed drain current | -300A |
| Power dissipation | 42W |
| On-state resistance | 5.8mΩ |
| Gate charge | 115nC |