Bipolar Transistor Array, Darlington, NPN, 50 V, 500 mA, 2.25 W, 1000 hFE, DIP
Kordarv:
1.0
Minimum quantity:
1.0
Sertifikaadid:
Product downloads
Spetsifikatsioon tootele Bipolar Transistor Array, Darlington, NPN, 50 V, 500 mA, 2.25 W, 1000 hFE, DIP
| Max operating temperature | 85°C |