Bipolar Transistor Array, NPN, 50 V, 500 mA, 2.25 W, 1000 hFE, DIP
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1.0
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Spetsifikatsioon tootele Bipolar Transistor Array, NPN, 50 V, 500 mA, 2.25 W, 1000 hFE, DIP
| Max operating temperature | 85°C |