Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
YJG80G06A-YAN
Tootja: YANGJIE TECHNOLOGY
Tootja tootekood: YJG80G06A
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
| Mounting | SMD |
| Case | DFN5060-8 |
| Kind of package | reel, tape |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SPLIT GATE TRENCH |
| Drain-source voltage | 60V |
| Drain current | 50A |
| Pulsed drain current | 320A |
| Power dissipation | 38W |
| On-state resistance | 5mΩ |
| Gate charge | 67nC |