Specification for Diode: TVS; 30kW; 187.7V; 111.2A; bidirectional; R6; bulk
| Mounting | THT |
| Case | R6 |
| Kind of package | bulk |
| Semiconductor structure | bidirectional |
| Max. off-state voltage | 168V |
| Features of semiconductor devices | glass passivated |
| Max. forward impulse current | 111.2A |
| Type of diode | transil |
| Leakage current | 10µA |