Diode: switching; SMD; 100V; 250mA; 4ns; Ufmax: 1.25V; Ifsm: 9A

Multiples: 1.0
Minimum quantity: 1.0
Product code: BAS16LTH-HG3-08
Manufacturer: VISHAY
Manufacturer code: BAS16LTH-HG3-08
  • Mounting
  • Case
  • Semiconductor structure
  • Max. off-state voltage
  • Max. load current
  • Max. forward impulse current
  • Load current
  • Max. forward voltage
  • Application
  • Reverse recovery time
  • Type of diode
  • Leakage current

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Specification for Diode: switching; SMD; 100V; 250mA; 4ns; Ufmax: 1.25V; Ifsm: 9A

Mounting SMD
Case DFN2
Semiconductor structure single diode
Max. off-state voltage 100V
Max. load current 250mA
Max. forward impulse current 9A
Load current 250mA
Max. forward voltage 1.25V
Application automotive industry
Reverse recovery time 4ns
Type of diode switching
Leakage current 1µA