Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8

Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8

Multiples: 1.0

Minimum quantity: 1.0

Product code: ECH8695R-TL-W
Manufacturer: ONSEMI
Manufacturer code: ECH8695R-TL-W
Certificates:

Mounting
Case
Kind of package
Kind of package
Polarisation
Semiconductor structure
Type of transistor
Kind of channel
Number of pins
Version
Drain-source voltage
Application
Drain current
Pulsed drain current
Power dissipation
On-state resistance
Gate charge
Max operating temperature

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1.12 €

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Specification for Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8

Mounting	SMD
Case	ECH8
Kind of package	reel, tape
Polarisation	unipolar
Semiconductor structure	common drain
Type of transistor	N-MOSFET x2
Kind of channel	enhanced
Number of pins	8
Version	ESD
Drain-source voltage	24V
Application	charging control
Drain current	11A
Pulsed drain current	60A
Power dissipation	1.4W
On-state resistance	9.1mΩ
Gate charge	10nC
Max operating temperature	150°C