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    3. Transistor: P-MOSFET x2; unipolar; -30V; -3.05A; Idm: -12A; 1.25W
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    Transistor: P-MOSFET x2; unipolar; -30V; -3.05A; Idm: -12A; 1.25W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: NTMD3P03R2G
    Manufacturer: ONSEMI
    Manufacturer code: NTMD3P03R2G
    Certificates:
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Number of pins
    • Drain-source voltage
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge
    • Max operating temperature

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    Specification for Transistor: P-MOSFET x2; unipolar; -30V; -3.05A; Idm: -12A; 1.25W

    Mounting SMD
    Case SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET x2
    Kind of channel enhanced
    Number of pins 8
    Drain-source voltage -30V
    Pulsed drain current -12A
    Power dissipation 1.25W
    On-state resistance 85mΩ
    Gate charge 16nC
    Max operating temperature 150°C