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    3. Transistor: N-MOSFET x2; unipolar; 80V; 31A; Idm: 114A; 17W; DFN8
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    Transistor: N-MOSFET x2; unipolar; 80V; 31A; Idm: 114A; 17W; DFN8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: NVMFD6H846NLT1G
    Manufacturer: ONSEMI
    Manufacturer code: NVMFD6H846NLT1G
    Certificates:
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Number of pins
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET x2; unipolar; 80V; 31A; Idm: 114A; 17W; DFN8

    Mounting SMD
    Case DFN8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Number of pins 8
    Drain-source voltage 80V
    Drain current 31A
    Power dissipation 17W
    On-state resistance 15mΩ
    Gate charge 17nC