Specification for Diode: Schottky rectifying; SiC; THT; 1.2kV; 2x10A; 53.2/468.8W
| Mounting | THT |
| Case | TO247-3 |
| Semiconductor structure | common cathode, double |
| Max. off-state voltage | 1.2kV |
| Features of semiconductor devices | MPS |
| Technology | SiC |
| Max. forward impulse current | 220A |
| Max. forward voltage | 1.4V |
| Series | UJ3D |
| Power dissipation | 53.2/468.8W |
| Type of diode | Schottky rectifying |