Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 62MM

    Kordarv: 3.0
    Minimum quantity: 3.0
    Tootekood: 1MBI200U4H-120L-50
    Tootja: FUJI
    Tootja tootekood: 1MBI200U4H-120L-50
    • Case
    • Electrical mounting
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 62MM

    Case 62MM
    Electrical mounting FASTON connectors, screw
    Mechanical mounting screw
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Gate-emitter voltage ±20V
    Pulsed collector current 400A
    Topology boost chopper
    Collector current 200A