Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Kordarv:
1.0
Minimum quantity:
1.0
Sertifikaadid:
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Spetsifikatsioon tootele Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
| Mounting | THT |
| Case | TO247 |
| Kind of package | tube |
| Type of transistor | IGBT |
| Turn-on time | 111ns |
| Power dissipation | 188W |
| Gate-emitter voltage | ±30V |
| Pulsed collector current | 150A |
| Collector current | 50A |
| Gate charge | 76nC |
| Collector-emitter voltage | 650V |
| Turn-off time | 206ns |
| Turn-off switching energy | 850µJ |
| Turn-on switching energy | 1.92mJ |
| Collector-emitter saturation voltage | 1.9V |