Spetsifikatsioon tootele Transistor: IGBT
| Mounting | SMD |
| Case | D3PAK |
| Kind of package | tube |
| Type of transistor | IGBT |
| Technology | NPT, POWER MOS 8® |
| Turn-on time | 26ns |
| Power dissipation | 521W |
| Gate-emitter voltage | ±30V |
| Pulsed collector current | 100A |
| Collector current | 25A |
| Gate charge | 154nC |
| Collector-emitter voltage | 1.2kV |
| Turn-off time | 164ns |