Spetsifikatsioon tootele Transistor: IGBT
| Mounting | THT |
| Case | T-Max |
| Kind of package | tube |
| Type of transistor | IGBT |
| Technology | POWER MOS 8®, PT |
| Turn-on time | 46ns |
| Power dissipation | 520W |
| Gate-emitter voltage | ±30V |
| Pulsed collector current | 202A |
| Collector current | 68A |
| Gate charge | 198nC |
| Collector-emitter voltage | 600V |
| Turn-off time | 304ns |