Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns
| Mounting | THT |
| Case | TO247-3 |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SiC, Z-FET™ |
| Drain-source voltage | 1.2kV |
| Drain current | 60A |
| Power dissipation | 330W |
| On-state resistance | 40mΩ |
| Reverse recovery time | 54ns |
| Gate charge | 115nC |