IGBT Single Transistor, N-Ch, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pins
Kordarv:
1.0
Minimum quantity:
1.0
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Spetsifikatsioon tootele IGBT Single Transistor, N-Ch, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pins
| Mounting | SMD |
| Case | D2PAK |
| Kind of package | reel, tape |
| Type of transistor | IGBT |
| Number of pins | 3 |
| Features of semiconductor devices | logic level |
| Version | ESD |
| Power dissipation | 134W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 120A |
| Collector current | 40A |
| Gate charge | 36nC |
| Collector-emitter voltage | 650V |