Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 33.4A
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
GAN041-650WSBQ
Tootja: NEXPERIA
Tootja tootekood: GAN041-650WSBQ
Product downloads
Spetsifikatsioon tootele Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 33.4A
| Mounting | THT |
| Case | SOT429, TO247 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-JFET/N-MOSFET |
| Technology | GaN |
| Drain-source voltage | 650V |
| Pulsed drain current | 240A |
| Power dissipation | 187W |
| On-state resistance | 35mΩ |
| Gate charge | 22nC |
| Kind of transistor | cascode |