Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: HGT1S10N120BNST
    Tootja: ONSEMI
    Tootja tootekood: HGT1S10N120BNST
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Type of transistor
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage

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    Spetsifikatsioon tootele Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK

    Mounting SMD
    Case D2PAK
    Kind of package reel, tape
    Type of transistor IGBT
    Power dissipation 298W
    Gate-emitter voltage ±20V
    Pulsed collector current 80A
    Collector current 17A
    Gate charge 150nC
    Collector-emitter voltage 1.2kV