Spetsifikatsioon tootele IPB65R190CFDATMA2
| Mounting | SMD |
| Case | PG-TO263-3 |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Drain-source voltage | 650V |
| Drain current | 17.5A |
| Power dissipation | 151W |
| Gate charge | 68nC |
| Mounting | SMD |
| Case | PG-TO263-3 |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Drain-source voltage | 650V |
| Drain current | 17.5A |
| Power dissipation | 151W |
| Gate charge | 68nC |