Spetsifikatsioon tootele Transistor: N-MOSFET
| Mounting | SMD |
| Case | PG-TO252-3, DPAK, TO252 |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SiC |
| Drain-source voltage | 60V |
| Drain current | 120A |
| Power dissipation | 107W |
| Gate charge | 68nC, 45nC |