Spetsifikatsioon tootele Transistor: N-MOSFET
| Mounting | SMD |
| Case | PG-TO252-3 |
| Polarisation | N |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | MOSFET |
| Drain-source voltage | 600V |
| Drain current | 2.6A |
| Power dissipation | 29W |
| Gate charge | 4.6nC |
| Mounting | SMD |
| Case | PG-TO252-3 |
| Polarisation | N |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | MOSFET |
| Drain-source voltage | 600V |
| Drain current | 2.6A |
| Power dissipation | 29W |
| Gate charge | 4.6nC |