Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
| Mounting | THT |
| Case | IPAK |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | CoolMOS™ P7 |
| Version | ESD |
| Drain-source voltage | 800V |
| Drain current | 1A |
| Pulsed drain current | 2.6A |
| Power dissipation | 13W |
| On-state resistance | 4.5Ω |
| Gate charge | 4nC |