Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
| Mounting | THT |
| Case | IPAK |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Features of semiconductor devices | logic level |
| Technology | HEXFET® |
| Drain-source voltage | 30V |
| Drain current | 160A |
| Power dissipation | 135W |
| On-state resistance | 3.1mΩ |
| Gate charge | 39nC |